SiC (Silicon Carbide) and GaN (Gallium Nitride) are the two most mature wide-bandgap (WBG) semiconductors that outperform traditional silicon in efficiency, frequency, and power density. Key Comparison: SiC vs GaN for High-Frequency Converters Parameter SiC (Silicon Carbide) GaN (Gallium Nitride) Voltage Rating High (650V–6.5kV) Medium (30V–900V) Power Level Medium to High (kW to 100s kW) Low to Medium (few kW to ~10 kW) Switching Frequency Up to 500 kHz MHz to GHz range Switching Speed Moderate (fast) Ultra-fast (10× faster than SiC) Conduction Losses Low Very Low / Ultra-Low Switching Losses Low Ultra-Low Efficiency High (95–98%) Very High (96–99%) Temperature Operation Up to 600°C Moderate (up to 200°C) Thermal Conductivity 2.5× better than Si Moderate Breakdown Voltage 10× higher than Si Moderate (5× higher than Si) Reverse Recovery Fast Fast / Ultra-fast System Size Compact ...